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APT1201R6BVFR APT1201R6SVFR
1200V
8A 1.600
POWER MOS V(R) FREDFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
BVFR
TO-247
D3PAK
* Faster Switching * Lower Leakage
* Avalanche Energy Rated * FAST RECOVERY BODY DIODE
G
SVFR
D
* TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
S
All Ratings: TC = 25C unless otherwise specified.
APT1201R6BVFR_SVFR UNIT Volts Amps
1200 8 32 30 40 280 2.24 -55 to 150 300 8 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1210
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
1200 8 1.600 250 1000 100 2 4
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 4A)
Ohms A nA Volts
6-2004 050-5849 Rev A
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT1201R6BVFR_SVFR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT pF
3050 255 125 155 15 78 12 10 50 15
3660 360 190 230 23 115 24 20 75 30
ns nC
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2
MIN
TYP
MAX
UNIT Amps Volts V/ns ns C Amps
8 32 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
(Body Diode) (VGS = 0V, IS = -ID [Cont.])
dv/ 5 dt
t rr Q rr IRRM
Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s)
220 450 1.0 3.0 10 14
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.45 40
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 37.81mH, R = 25, Peak I = 8A temperature. j G L 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS ID-8A di/dt 700A/s VR 1200V TJ 150C APT Reserves the right to change, without notice, the specifications and information contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction
0.5
, THERMAL IMPEDANCE (C/W)
D=0.5 0.1 0.05 0.2 0.1 0.05 0.02 0.01 0.005 0.01 SINGLE PULSE Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
050-5849 Rev A
6-2004
Z
JC
0.001 10-5
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
APT1201R6BVFR_SVFR
10
ID, DRAIN CURRENT (AMPERES)
VGS=5.5V, 6V, 7V, 10V &15V
ID, DRAIN CURRENT (AMPERES)
10
VGS=5.5V, 6V, 7V, 10V &15V
8
8
6 4.5V 4
6 4.5V 4
2 4V 0 100 200 300 400 500 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0
2 4V 0 3 6 9 12 15 18 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
10
ID, DRAIN CURRENT (AMPERES)
TJ = -55C TJ = +25C TJ = +125C
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.3
V
GS
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
8
1.2 VGS=10V 1.1 VGS=20V 1.0
6
4 TJ = +125C TJ = +25C TJ = -55C
2
0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 8
ID, DRAIN CURRENT (AMPERES)
0
0.9
0
4 8 12 16 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15 1.10 1.05 1.00 0.95 0.90 0.85
6
4
2
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
0
25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
-50
2.5
I = 0.5 I [Cont.]
D D
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
V
GS
= 10V
2.0
1.1 1.0 0.9 0.8 0.7 0.6
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
050-5849 Rev A
6-2004
APT1201R6BVFR_SVFR
50 10S
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
15,000 10,000 5,000
C, CAPACITANCE (pF)
100S
10 5
Ciss
1mS
1,000 500 Coss
1 0.5 TC =+25C TJ =+150C SINGLE PULSE
10mS 100mS DC
100 50
Crss
0.1
1 5 10 50 100 500 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D D
.01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
50
16
VDS=120V VDS=240V
TJ =+150C 10 5
TJ =+25C
12
VDS=600V
8
1 .5
4
50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
.1
TO-247 Package Outline (BVFR)
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D PAK Package Outline (SVFR)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
13.79 (.543) 13.99 (.551)
11.51 (.453) 11.61 (.457)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
0.46 (.018) 0.56 (.022) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082)
1.27 (.050) 1.40 (.055)
2.40 (.094) 2.70 (.106)
(Base of Lead)
6-2004
1.01 (.040) 1.40 (.055)
050-5849 Rev A
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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